Atmospheric Neutron Radiation Response of III–V Binary Compound Semiconductors

Gravitational radiation from coalescing binary neutron stars.

We calculate the gravitational radiation produced by the merger and coalescence of inspiraling binary neutron stars using 3-dimensional numerical simulations. The stars are modeled as polytropes and start out in the pointmass limit at wide separation. The hydrodynamic integration is performed using smooth particle hydrodynamics (SPH) with Newtonian gravity, and the gravitational radiation is ca...

Compound Semiconductors

Hydrogen in compound semiconductors

Hydrogen can be inadvertently introduced at any of several steps in the fabrication of optoelectronic devices. The most common consequence of hydrogenation is the passivation of dopant impurities, which leads to a decrease in the electrical conductivity of the material. The most successfully applied experimental technique for directly determining the involvement of hydrogen has been infrared-ab...

Linking electromagnetic and gravitational radiation in coalescing binary neutron stars

Carlos Palenzuela, Luis Lehner, Steven L. Liebling, Marcelo Ponce, Matthew Anderson, David Neilsen, and Patrick Motl Canadian Institute for Theoretical Astrophysics, Toronto, Ontario M5S 3H8, Canada Perimeter Institute for Theoretical Physics,Waterloo, Ontario N2L 2Y5, Canada Department of Physics, Long Island University, New York 11548, USA Department of Physics, University of Guelph, Guelph, ...

Technology Roadmaps for Compound Semiconductors

The roles cited for compound semiconductors in public versions of existing technology roadmaps from the National Electronics Manufacturing Initiative, Inc., Optoelectronics Industry Development Association, Microelectronics Advanced Research Initiative on Optoelectronic Interconnects, and Optoelectronics Industry and Technology Development Association (OITDA) are discussed and compared within t...